| PART |
Description |
Maker |
| PA7006 |
3.8?.2GHz 10W 40dB SOLID STATE POWER AMPLIFIER
|
MTRONPTI
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TDA7497 |
10W 10W 10W/15W TRIPLE AMPLIFIER
10 10W STEREO AMPLIFIER WITH MUTE/ST-BY
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| MGFC42V374204 MGFC42V3742 |
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LC-FSLC-220SN-0405A FSLC-220SN |
3216 Size 2GHz Band Chip Multilayer Coupler
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC41V6472 |
6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC41V3642_04 MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
